S-Parameter Simulation of RF-HEMTs
نویسندگان
چکیده
This paper describes the results of a physically based time efficient method of simulating Sparameters of RF-High Electron Mobility Transistors (HEMTs) . In a frequency range from 2 GHz up to 120 GHz the simulated S-parameters show good agreement with the measurements obtained in the same frequency range. Using the two-dimensional device simulator MINIMOS-NT and a time domain method critical HEMT structures can be characterized in the RF-domain. Equivalent to the Sparameters also the full set of the eight-element small signal equivalent circuit elements is obtained. The dependence of small signal circuit elements on changes in the bias can be reproduced realistically.
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تاریخ انتشار 2014